DC9015 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for use in pre-amplifier of low level and low noise. pinning 1 = emitter2 = base 3 = collector to-92 .022(0.56).014(0.36) .050 (1.27) .148(3.76).132(3.36) typ .190(4.83).170(4.33) .100 (2.54) typ .050 (1.27) typ .022(0.56).014(0.36) .190(4.83).170(4.33) .500 (12.70) min 2o typ 5o typ. 2o typ 3 2 1 5o typ. dimensions in inches and (millimeters) characteristic symbol rating unit collector-base voltage vcbo -50 v collector-emitter voltage vceo -45 v emitter-base voltage vebo -5 v collector current ic -100 ma total power dissipation pd 450 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -50 - - v ic=-100ma, ie=0 collector-emitter breakdown voltage bvceo -45 - - v ic=-1ma, ib=0 emitter-base breakdown volatge bvebo -5 - - v ie=-100ma, ic=0 collector cutoff current icbo - - -50 na vcb =-50v, ie=0 emitter cutoff current iebo - - -50 na veb =-5v, ic=0 collector-emitter saturation voltage (1) vce(sat) - -0.2 -0.7 v ic=-100ma, ib=-5ma base-emitter saturation voltage (1) vbe(sat) - -0.82 -1 v ic=-100ma, ib=-5ma base-emitter on voltage vbe(on) -0.6 -0.65 -0.75 v ic=-2ma, vce=-5v dc current gain(1) hfe 60 - 1000 - ic=-1ma, vce=-5v transition frequency ft 100 190 - mhz ic=-10ma, vce=-5v output capacitance cob - 4.5 7 pf vcb =-10v, f=1mhz, ie=0 electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% classification of hfe rank a b c d range 60~150 100~300 200~600 400~1000
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